NexFET generation 2, new way to power

In this paper, an integrated NexFET power module is presented to meet requirements on next-generation, high efficiency and high current density DC-DC converters for computer applications. The new power module uses an innovative stacked-die package technology, implements low V th power MOSFET in the...

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Bibliographic Details
Main Authors: Boyi Yang, Shuming Xu, Korec, J., Jun Wang, Lopez, O., Jauregui, D., Kocon, C., Herbsommer, J., Molloy, S., Daum, G., Haian Lin, Pearce, C., Noquil, J., Shen, J.
Format: Conference Proceeding
Language:English
Subjects:
FETs
Logic gates
Multichip modules
Power MOSFET
Switches
Switching circuits
Citations: Items that cite this one
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Description
Summary:In this paper, an integrated NexFET power module is presented to meet requirements on next-generation, high efficiency and high current density DC-DC converters for computer applications. The new power module uses an innovative stacked-die package technology, implements low V th power MOSFET in the low-side position, and introduces monolithically integrated components to avoid shoot-through and minimize voltage ringing at the switch node. In synchronous buck application, this power module achieves over 90% efficiency and low switch node ringing at high output current rating (25A) and high operation frequency (1MHz) under 12V input and 1.3V output condition.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2011.6131615