A novel atomic layer oxidation technique for EOT scaling in gate-last high-к/metal gate CMOS technology

We demonstrated sub-1nm equivalent oxide thickness (EOT) for a gate-last high-k/metal scheme. This is enabled by (1) controllable 1000°C high temperature atomic layer oxidation on a chemical oxide (chemox) to form

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Bibliographic Details
Main Authors: Min Dai, Jinping Liu, Guo, Dechao, Krishnan, S., Shepard, J. F., Ronsheim, P., Unoh Kwon, Siddiqui, S., Krishnan, R., Zhengwen Li, Kai Zhao, Sudijono, J., Chudzik, M. P.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Annealing
Atomic layer deposition
Chemicals
Hafnium compounds
Logic gates
Silicon
Online Access:Request full text
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Description
Summary:We demonstrated sub-1nm equivalent oxide thickness (EOT) for a gate-last high-k/metal scheme. This is enabled by (1) controllable 1000°C high temperature atomic layer oxidation on a chemical oxide (chemox) to form
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2011.6131632