Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems

We compare independent gate FinFETs, FinFETs with different fin orientations and asymmetric drain spacer extension FinFETs to analyze the implications of each for memory design in sub-15nm technologies. A mixed mode simulation framework based on ballistic NEGF models for FinFETs and circuit simulati...

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Bibliographic Details
Main Authors: Gupta, S. K., Choday, S. H., Roy, K.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Degradation
FinFETs
Integrated circuit modeling
Logic gates
Mathematical model
Random access memory
Online Access:Request full text
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Description
Summary:We compare independent gate FinFETs, FinFETs with different fin orientations and asymmetric drain spacer extension FinFETs to analyze the implications of each for memory design in sub-15nm technologies. A mixed mode simulation framework based on ballistic NEGF models for FinFETs and circuit simulations in SPICE is developed for the analysis.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2011.6131659