Normally-off InAlN/GaN HEMTs with n++ GaN cap layer: A simulation study

The ongoing interest in the development of GaN-based enhancement-mode high electron mobility transistors (EHEMTs) resulted in several different approaches being proposed, one of them employing a reduction of the gate-to-channel distance. In order to facilitate gate recessing, a technique using a n +...

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Bibliographic Details
Main Authors: Vitanov, S., Kuzmik, J., Palankovski, V.
Format: Conference Proceeding
Language:English
Subjects:
Current density
Electric fields
Gallium nitride
HEMTs
Integrated circuit modeling
Logic gates
MODFETs
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Summary:The ongoing interest in the development of GaN-based enhancement-mode high electron mobility transistors (EHEMTs) resulted in several different approaches being proposed, one of them employing a reduction of the gate-to-channel distance. In order to facilitate gate recessing, a technique using a n ++ cap layer was suggested by Kuzmik et al., who also analyzed the contribution of the cap layer to current conduction and on the mechanism of the off-state breakdown. In this work we complement the experimental results with two-dimensional device simulation using Minimos-NT. We have employed it previously for the optimization studies of a whole generation of AlGaN/GaN HEMTs, but also for high-temperature simulations.
DOI:10.1109/ISDRS.2011.6135161