Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fT near 200 GHz

We report on the 172/180 GHz (f T /f max ) E-mode InAlN/AlN/GaN HEMTs with a recess etched gate footprint of 33 nm. To develop further scaling strategies, comparative studies were carried out on E and D-mode HEMTs with f T near 200 GHz at both room (RT) and cryogenic temperatures (LT). Delay compone...

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Main Authors: Sensale-Rodriguez, B., Jia Guo, Ronghua Wang, Guowang Li, Tian Fang, Saunier, P., Ketterson, A., Schuette, M., Xiang Gao, Shiping Guo, Yu Cao, Laboutin, O., Johnson, W., Snider, G., Fay, P., Jena, D., Huili Xing
Format: Conference Proceeding
Language:English
Subjects:
Delay
Gallium nitride
HEMTs
Logic gates
MODFETs
Passivation
USA Councils
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Summary:We report on the 172/180 GHz (f T /f max ) E-mode InAlN/AlN/GaN HEMTs with a recess etched gate footprint of 33 nm. To develop further scaling strategies, comparative studies were carried out on E and D-mode HEMTs with f T near 200 GHz at both room (RT) and cryogenic temperatures (LT). Delay component analysis indicates that the speed of the E-mode device is dominated by parasitic delays, and that the electron velocity in the E-mode is about 2/3 of that in D-mode, most likely steming from mobility degradation during gate recess etch.
DOI:10.1109/ISDRS.2011.6135164