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Analysis and simulation of a 45nm high-K/metal PD-SOI DTMOS under forward bias
As effective gate length and gate oxide thickness in Metal-Oxide-Semiconductor (MOS) transistors are aggressively scaled down for higher performance and circuit density, the levels for gate leakage current [1-2], standby power consumption [1-2] and gate oxide reliability [3] are degraded. Therefore,...
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Main Authors: | , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | As effective gate length and gate oxide thickness in Metal-Oxide-Semiconductor (MOS) transistors are aggressively scaled down for higher performance and circuit density, the levels for gate leakage current [1-2], standby power consumption [1-2] and gate oxide reliability [3] are degraded. Therefore, now hafnium dioxide (HfO 2 ) is being incorporated into the gate stack of silicon based MOSFETs. |
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DOI: | 10.1109/ISDRS.2011.6135370 |