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Analysis and simulation of a 45nm high-K/metal PD-SOI DTMOS under forward bias

As effective gate length and gate oxide thickness in Metal-Oxide-Semiconductor (MOS) transistors are aggressively scaled down for higher performance and circuit density, the levels for gate leakage current [1-2], standby power consumption [1-2] and gate oxide reliability [3] are degraded. Therefore,...

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Bibliographic Details
Main Authors: Jimenez-P, Abimael, Ambrosio-L, Roberto C., Martinez-P, Carlos A., Monfil-L, Karim, Munoz-G, Jose A., Blanco-G, Zurika I.
Format: Conference Proceeding
Language:English
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Summary:As effective gate length and gate oxide thickness in Metal-Oxide-Semiconductor (MOS) transistors are aggressively scaled down for higher performance and circuit density, the levels for gate leakage current [1-2], standby power consumption [1-2] and gate oxide reliability [3] are degraded. Therefore, now hafnium dioxide (HfO 2 ) is being incorporated into the gate stack of silicon based MOSFETs.
DOI:10.1109/ISDRS.2011.6135370