Electrical characteristics of SiGe MOSFETs integrated with Tantalum or Titanium oxynitride higher-k gate dielectrics

Metal oxide semiconductor field effect transistors (MOSFET) with SiGe channel and higher-k gate dielectric are studied in this work. Samples with TaON/HfO 2 or TiON/HfO 2 stacks show larger drain current, transconductance, and smaller subthreshold swing than that with single HfO 2 layer. In addition...

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Main Authors: Chen-Chien Li, Kuei-Shu Chang-Liao, Chung-Hao Fu, Te-Hsuen Tzeng, Tien-Ko Wang, Wen-Fa Tsai, Chi-Fong Ai
Format: Conference Proceeding
Language:English
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Summary:Metal oxide semiconductor field effect transistors (MOSFET) with SiGe channel and higher-k gate dielectric are studied in this work. Samples with TaON/HfO 2 or TiON/HfO 2 stacks show larger drain current, transconductance, and smaller subthreshold swing than that with single HfO 2 layer. In addition, the reliability of SiGe MOSFET device is clearly improved with TaON/HfO 2 stacks in terms of degradation of Gm and Vth after hot-carrier stress. The integration of SiGe channel with TaON/HfO 2 higher-k dielectric is useful for high-performance MOSFETs.
DOI:10.1109/ISDRS.2011.6135387