Electrical characteristics of SiGe MOSFETs integrated with Tantalum or Titanium oxynitride higher-k gate dielectrics
Metal oxide semiconductor field effect transistors (MOSFET) with SiGe channel and higher-k gate dielectric are studied in this work. Samples with TaON/HfO 2 or TiON/HfO 2 stacks show larger drain current, transconductance, and smaller subthreshold swing than that with single HfO 2 layer. In addition...
Saved in:
Main Authors: | , , , , , , |
---|---|
Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Metal oxide semiconductor field effect transistors (MOSFET) with SiGe channel and higher-k gate dielectric are studied in this work. Samples with TaON/HfO 2 or TiON/HfO 2 stacks show larger drain current, transconductance, and smaller subthreshold swing than that with single HfO 2 layer. In addition, the reliability of SiGe MOSFET device is clearly improved with TaON/HfO 2 stacks in terms of degradation of Gm and Vth after hot-carrier stress. The integration of SiGe channel with TaON/HfO 2 higher-k dielectric is useful for high-performance MOSFETs. |
---|---|
DOI: | 10.1109/ISDRS.2011.6135387 |