An RCP Packaged Transceiver Chipset for Automotive LRR and SRR Systems in SiGe BiCMOS Technology

• Published in: IEEE transactions on microwave theory and techniques 2012-03, Vol.60 (3), p.778-794
• Main Authors: Trotta, S., Wintermantel, M., Dixon, J., Moeller, U., Jammers, R., Hauck, T., Samulak, A., Dehlink, B., Shun-Meen, K., Hao Li, Ghazinour, A., Yi Yin, Pacheco, S., Reuter, R., Majied, S., Moline, D., Aaron, T., Trivedi, V. P., Morgan, D. J., John, J.
• Format: Article
• Language: English
• Subjects: Bipolar technology; Channels; Chips (electronics); Chirp; high frequency; low noise; Mixers; multichannel; Noise; Noise levels; Offsets; package; Phase noise; Power dissipation; Radar; Radio frequency; receiver (Rx); redistributed chip package (RCP); SiGe; Silicon germanides; transceiver; Transceivers; transmitter (Tx); Voltage-controlled oscillators
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2011.2181536

We present a transceiver chipset consisting of a four channel receiver (Rx) and a single-channel transmitter (Tx) designed in a 200-GHz SiGe BiCMOS technology. Each Rx channel has a conversion gain of 19 dB with a typical single sideband noise figure of 10 dB at 1-MHz offset. The Tx includes two exclusively-enabled voltage-controlled oscillators on the same die to switch between two bands at 76-77 and 77-81 GHz. The phase noise is -97 dBc/Hz at 1-MHz offset. On-wafer, the output power is 2 × 13 dBm. At 3.3-V supply, the Rx chip draws 240 mA, while the Tx draws 530 mA. The power dissipation for the complete chipset is 2.5 W. The two chips are used as vehicles for a 77-GHz package test. The chips are packaged using the redistribution chip package technology. We compare on-wafer measurements with on-board results. The loss at the RF port due to the transition in the package results to be less than 1 dB at 77 GHz. The results demonstrate an excellent potential of the presented millimeter-wave package concept for millimeter-wave applications.