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PECVD silicon carbide for micromachined transducers
We report preliminary work on PECVD amorphous hydrogenated silicon carbide (a-SiC:H) as a material with many potential applications in micromachined transducers. Four examples are presented: an electrochemical probe; a fully packaged, encapsulated pressure sensor; a sealed and coated microfluidic ch...
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Main Authors: | , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Citations: | Items that cite this one |
Online Access: | Request full text |
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Summary: | We report preliminary work on PECVD amorphous hydrogenated silicon carbide (a-SiC:H) as a material with many potential applications in micromachined transducers. Four examples are presented: an electrochemical probe; a fully packaged, encapsulated pressure sensor; a sealed and coated microfluidic channel; and deep etched channels in glass. A designed experiment was undertaken in an attempt to correlate stress, resistivity and wet etchability with the following process parameters: pressure, CH/sub 4/ flow rate, low frequency power, low frequency cycle time, high frequency power, and high frequency cycle time. While this preliminary work does demonstrate a CMOS compatible, insulating thin film with low stress ( |
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DOI: | 10.1109/SENSOR.1997.613622 |