Simulation of novel phase change memory cell with Titanium Nitride heating layer

A novel phase-change memory cell with a heating layer structure (HLS) was proposed in this work. By having an additional Titanium Nitride (TiN) layer under the bottom electrode, the heat loss can be effectively prevented. A three-dimensional finite element model for phase change memory (PCM) is esta...

Full description

Saved in:
Bibliographic Details
Main Authors: Xiaofeng Du, Sannnian Song, Zhitang Song, Weili Liu, Yuefeng Gong, Yifeng Gu
Format: Conference Proceeding
Language:English
Subjects:
Electrodes
Finite element methods
Heat transfer
Heating
Joule-heating
Phase change materials
Phase change memory
phase-change momory (PCM)
programming current
thermal analysis
Tin
titanium nitride (TiN)
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A novel phase-change memory cell with a heating layer structure (HLS) was proposed in this work. By having an additional Titanium Nitride (TiN) layer under the bottom electrode, the heat loss can be effectively prevented. A three-dimensional finite element model for phase change memory (PCM) is established to simulate thermal and electrical behaviors. Compared with the traditional structure (TS) PCM cell, the simulation results indicate that the HLS has advantages of increasing the heating efficiency and reducing the heat loss. The thermal effect of the access device of PCM is also simulated and the HLS offers a higher driving current because of a higher temperature in the device region. Therefore, the HLS cell will be propitious for developing the PCRAM with low power consumption and high integration.
DOI:10.1109/NVMTS.2011.6137086