Drain current and switching speed of the Double-Pole Four-Throw RF CMOS switch

Established RF CMOS switch contains MOSFET in its main architecture with a 5.0 V of control voltage and required high value of resistance in circuitry of transceivers to detect the signal. To avoid the high value of control voltage and those resistances, we proposed a Double-Pole Four-Throw switch u...

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Bibliographic Details
Main Authors: Srivastava, V. M., Singh, G., Yadav, K. S.
Format: Conference Proceeding
Language:English
Subjects:
CMOS integrated circuits
CMOS Switch
DP4T Switch
Drain current
Logic gates
MOSFET circuits
Radio frequency
RF Switch
Switches
Switching circuits
Switching Speed
Transceivers
VLSI
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Summary:Established RF CMOS switch contains MOSFET in its main architecture with a 5.0 V of control voltage and required high value of resistance in circuitry of transceivers to detect the signal. To avoid the high value of control voltage and those resistances, we proposed a Double-Pole Four-Throw switch using RF CMOS technology and verified its performance interns of currents and switching speed. Also to provide a plurality of such switches, where the power and area could be reduced as compared to already existing transceiver switch configuration, which is simply a reduction of signal strength during transmission for RF. Our result shows that the peak output currents in these devices are around 0.387 mA and the switching speed is 30-31 ps.
ISSN:2325-940X
DOI:10.1109/INDCON.2011.6139419