Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach-Part II: Transient Effects

Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient phenomena observed during CP and ac characteri...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2012-03, Vol.59 (3), p.621-630
Main Authors: Garetto, Davide, Randriamihaja, Y. M., Rideau, D., Zaka, A., Schmid, A., Leblebici, Y., Jaouen, H.
Format: Article
Language:English
Subjects:
Applied sciences
Approximation methods
Charge pumping (CP)
charge trapping
Electron traps
Electronics
Exact sciences and technology
Interfaces
Logic gates
multiphonon-assisted model
oxide degradation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Substrates
Transient analysis
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Summary:Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient phenomena observed during CP and ac characterization (hysteresis loops) have been modeled, and the role of out-of-equilibrium quasi-Fermi levels in proximity of the Si/SiO 2 interface has been studied in detail.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2181389