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A new degradation mechanism of gate oxide reliability due to "extrinsic" responses of Qbd along rough "bird's-beak" frontline

The roughness of "bird's-beak" frontline prior to gate oxidation has been revealed for the first time to degrade gate oxide reliability in TDDB. This new mechanism identifies the "extrinsic" Q bd responses to electrical fields. The restorations of intrinsic Q bd have been re...

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Bibliographic Details
Main Authors: Lieyi Sheng, Gerlach, J., Glines, E.
Format: Conference Proceeding
Language:English
Subjects:
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Summary:The roughness of "bird's-beak" frontline prior to gate oxidation has been revealed for the first time to degrade gate oxide reliability in TDDB. This new mechanism identifies the "extrinsic" Q bd responses to electrical fields. The restorations of intrinsic Q bd have been realized by post-fabrication anneals or process improvement.
ISSN:1930-8841
2374-8036
DOI:10.1109/IIRW.2011.6142598