Formation of cylindrical profile of Si by KrF excimer laser system for optical interconnect

A technique applying the homogenized KrF excimer laser reformation to fabricate Si cylindrical profile is presented. High-power excimer laser was used to illuminate high-aspect-ratio Si ridges which were fabricated using typical lithography and etching process. The Si ridges were then melted and res...

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Bibliographic Details
Main Authors: Shih-Che Hung, Shu-Chia Shiu, Jiun-Jie Chao, Ching-Fuh Lin
Format: Conference Proceeding
Language:English
Subjects:
CMOS integrated circuits
Educational institutions
Lasers
Optical waveguides
Oxidation
Photonics
Silicon
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Summary:A technique applying the homogenized KrF excimer laser reformation to fabricate Si cylindrical profile is presented. High-power excimer laser was used to illuminate high-aspect-ratio Si ridges which were fabricated using typical lithography and etching process. The Si ridges were then melted and reshaped to cylinders due to surface tension. The structure can be further preceded by thermal oxidation to produce wave guiding photonics. It is capable of fabricating sub-micrometer Si waveguides with extremely smooth surface.
ISSN:1944-9399
1944-9380
DOI:10.1109/NANO.2011.6144570