Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes

The internal electric field due to the piezoelectric effect in an InGaN/GaN multiple quantum-well structure is measured via photoluminescence (PL), electroreflectance (ER), and photocurrent (PC) spectroscopies, and the measurement results are compared with each other and with theoretically calculate...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2012-04, Vol.48 (4), p.500-506
Main Authors: Park, Su-Ik, Lee, Jong-Ik, Jang, Dong-Hyun, Kim, Hyun-Sung, Shin, Dong-Soo, Ryu, Han-Youl, Shim, Jong-In
Format: Article
Language:English
Subjects:
Current measurement
Electric fields
Electric potential
Electroreflectance
Gallium nitride
GaN
Indium gallium nitrides
light-emitting diodes
Mathematical analysis
Modulation
modulation spectroscopy
photocurrent
piezoelectric field
Piezoelectricity
polarization
Polycarbonates
Quantum well devices
Quantum wells
strain
Voltage
Voltage measurement
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Summary:The internal electric field due to the piezoelectric effect in an InGaN/GaN multiple quantum-well structure is measured via photoluminescence (PL), electroreflectance (ER), and photocurrent (PC) spectroscopies, and the measurement results are compared with each other and with theoretically calculated values. The flat-band voltage is estimated by measuring the applied bias voltage that induces the maximum in PL peak energy by the quantum-confined Stark effect, 180° phase shift in the ER spectrum, and the smallest band tail state in the PC spectrum. The internal electric fields estimated by the PL, PC, and ER spectra are -1.81, -2.12±0.14, and -2.04 MV/cm, respectively. The measured piezoelectric fields are in good agreement with theoretically calculated values. Possible factors affecting piezoelectric field measurements are discussed from various perspectives.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2012.2186610