A Shallow-'ikench Isolation Study For 0.18pm Cmos Technology With Emphasis On The Effects Of Well Design, Channel-stop Implants, Trenchl Depth, And Salicide Process

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Bibliographic Details
Main Authors: Murtaza, S.S., Chatterjee, A., Mei, P., Amerasekera, A., Nicollian, P., Kittl, J., Breedijk, T., Hanratty, M., Nag, S., Ali, I., Rogers, D., Chen, I.-C.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Chemical processes
Chemical technology
CMOS process
CMOS technology
Implants
Instruments
Isolation technology
Measurement
Meeting planning
Online Access:Request full text
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ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.1997.614744