Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs

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Bibliographic Details
Main Authors: Kim, B.Y., Liu, I.M., Min, B.W., Luan, H.F., Gardner, M., Fulford, J., Kwong, D.L.
Format: Conference Proceeding
Language:English
Subjects:
Boron
CMOS process
Degradation
Design for quality
Furnaces
Microelectronics
MOSFETs
Stress
Temperature dependence
Threshold voltage
Online Access:Request full text
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ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.1997.614754