Defects in GaN film grown on Si (100) substrate

The authors study the presence defects in a GaN thin film, which was grown on Si (100) substrate using molecular beam epitaxy (MBE). The optical, structural and electrical characteristics of the sample are observed via photoluminescence (PL), X-ray diffraction (XRD), scanning electron microscopy (SE...

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Bibliographic Details
Main Authors: Zainal, N., Zaini, S. N. W. M., Yusof, M. N. E., Alias, E. A., Radzali, R., Hassan, Z.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Gallium nitride
Molecular beam epitaxial growth
Nanotechnology
Silicon
Substrates
Temperature measurement
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Summary:The authors study the presence defects in a GaN thin film, which was grown on Si (100) substrate using molecular beam epitaxy (MBE). The optical, structural and electrical characteristics of the sample are observed via photoluminescence (PL), X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall-effect measurements. From the measurements, the presence of cubic inclusions and the behavior of the defect in the sample have been identified.
DOI:10.1109/ESciNano.2012.6149641