Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs

In this work, we investigate analytically quantum mechanical (QM) effects on the threshold voltage (V TH ) shift of the surrounding-gate (SG) MOSFETs. We show how V TH is influenced with QM effects with the considerations of (110)-silicon (Si) orientation and (100)-Si orientation. When the radius of...

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Bibliographic Details
Main Authors: Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang
Format: Conference Proceeding
Language:English
Subjects:
Lead
MOSFET circuits
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Summary:In this work, we investigate analytically quantum mechanical (QM) effects on the threshold voltage (V TH ) shift of the surrounding-gate (SG) MOSFETs. We show how V TH is influenced with QM effects with the considerations of (110)-silicon (Si) orientation and (100)-Si orientation. When the radius of an SG MOSFET is small (
ISSN:2162-7541
2162-755X
DOI:10.1109/ASICON.2011.6157265