A small signal intrinsic equivalent circuit model for Cylindrical/Surrounded gate MOSFET for microwave frequency applications

An intrinsic small signal equivalent circuit of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from the circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are...

Full description

Saved in:
Bibliographic Details
Main Authors: Ghosh, P., Haldar, S., Gupta, R. S., Gupta, M.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Cylindrical/Surrounded (CGT/SGT)
Equivalent circuits
Integrated circuit modeling
Logic gates
Microwave theory and techniques
MOSFET circuits
S-parameters
Scattering parameters
Short channel effects (SCEs)
Small Signal Equivalent Circuit
Y-parameters
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An intrinsic small signal equivalent circuit of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from the circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation. Y parameters are evaluated and compared with Y parameters of Nanowire MOSFET.
ISSN:2165-4727
2165-4743