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Diplexer-like bias circuits for stabilizing GaAs HBTs during low frequency measurements
GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires transistor models to be accurate at low frequencies as well. Measurements of low frequency noise and network parameters however, are not straight f...
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| creator | Sevimli, O. McCulloch, G. Mould, R. Harvey, J. T. Fattorini, A. P. Young, A. C. Parker, A. E. |
| description | GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires transistor models to be accurate at low frequencies as well. Measurements of low frequency noise and network parameters however, are not straight forward because of the instabilities of the transistor in the measurement setup. We designed and built diplexer-like bias circuits to stabilize the transistors between DC and 50 GHz for successful low frequency measurements between 10 Hz and 1 MHz. |
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T. ; Fattorini, A. P. ; Young, A. C. ; Parker, A. E.</creator><creatorcontrib>Sevimli, O. ; McCulloch, G. ; Mould, R. ; Harvey, J. T. ; Fattorini, A. P. ; Young, A. C. ; Parker, A. E.</creatorcontrib><description>GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires transistor models to be accurate at low frequencies as well. Measurements of low frequency noise and network parameters however, are not straight forward because of the instabilities of the transistor in the measurement setup. 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We designed and built diplexer-like bias circuits to stabilize the transistors between DC and 50 GHz for successful low frequency measurements between 10 Hz and 1 MHz.</description><subject>Bias-T</subject><subject>Frequency measurement</subject><subject>Gallium arsenide</subject><subject>heterojunction bipolar transistor</subject><subject>Heterojunction bipolar transistors</subject><subject>Impedance</subject><subject>low frequency measurement</subject><subject>low frequency noise measurement</subject><subject>Noise measurement</subject><subject>Scattering parameters</subject><issn>2165-4727</issn><issn>2165-4743</issn><isbn>9781457720345</isbn><isbn>1457720345</isbn><isbn>9780858259744</isbn><isbn>0858259745</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo9j8tKAzEYheMNLHWewE1eYCD3y7JWbYWCm4rLkmT-SHRmWpMZtD596wXP5oPzwYFzgiqrDTHSMGm1EKdowqiStdCCn_04KqTWjHAhz_8d05eoKuWVHKMJl1ZN0PNt2rXwCblu0xtgn1zBIeUwpqHguM24DM6nNn2l_gUv3Kzg5c264GbM30W7_cAxw_sIfdjjDlwZM3TQD-UKXUTXFqj-OEVP93fr-bJePS4e5rNVnaiWQy1UbKQJ0PDALATivKdUiUjBSBK8MQ3hhkdrjVdEhIZpEdTxcVSMCC8on6Lr390EAJtdTp3L-42immtJ-QEdZlH1</recordid><startdate>201112</startdate><enddate>201112</enddate><creator>Sevimli, O.</creator><creator>McCulloch, G.</creator><creator>Mould, R.</creator><creator>Harvey, J. 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C.</creatorcontrib><creatorcontrib>Parker, A. E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sevimli, O.</au><au>McCulloch, G.</au><au>Mould, R.</au><au>Harvey, J. T.</au><au>Fattorini, A. P.</au><au>Young, A. C.</au><au>Parker, A. E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Diplexer-like bias circuits for stabilizing GaAs HBTs during low frequency measurements</atitle><btitle>Asia-Pacific Microwave Conference 2011</btitle><stitle>APMC</stitle><date>2011-12</date><risdate>2011</risdate><spage>323</spage><epage>326</epage><pages>323-326</pages><issn>2165-4727</issn><eissn>2165-4743</eissn><isbn>9781457720345</isbn><isbn>1457720345</isbn><eisbn>9780858259744</eisbn><eisbn>0858259745</eisbn><abstract>GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires transistor models to be accurate at low frequencies as well. Measurements of low frequency noise and network parameters however, are not straight forward because of the instabilities of the transistor in the measurement setup. We designed and built diplexer-like bias circuits to stabilize the transistors between DC and 50 GHz for successful low frequency measurements between 10 Hz and 1 MHz.</abstract><pub>IEEE</pub><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 2165-4727 |
| ispartof | Asia-Pacific Microwave Conference 2011, 2011, p.323-326 |
| issn | 2165-4727 2165-4743 |
| language | eng |
| recordid | cdi_ieee_primary_6173751 |
| source | IEEE Xplore All Conference Series |
| subjects | Bias-T Frequency measurement Gallium arsenide heterojunction bipolar transistor Heterojunction bipolar transistors Impedance low frequency measurement low frequency noise measurement Noise measurement Scattering parameters |
| title | Diplexer-like bias circuits for stabilizing GaAs HBTs during low frequency measurements |
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