A K-band CMOS cascode power amplifier using optimal bias selection methodology

A fully integrated K-band power amplifier is designed and fabricated in 0.18-μm CMOS technology in this paper. The conventional cascode power amplifier benefits from high gain and output power, but the efficiency is not well discussed before. In this study, the voltage variation and the large-signal...

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Bibliographic Details
Main Authors: Yu-Chung Hsu, Yi-Shin Chen, Tzung-Chuen Tsai, Kun-You Lin
Format: Conference Proceeding
Language:English
Subjects:
bias selection
cascode
CMOS
CMOS integrated circuits
CMOS technology
Gain
Logic gates
power amplifier
Power amplifiers
Power generation
Transistors
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Summary:A fully integrated K-band power amplifier is designed and fabricated in 0.18-μm CMOS technology in this paper. The conventional cascode power amplifier benefits from high gain and output power, but the efficiency is not well discussed before. In this study, the voltage variation and the large-signal performance of cascode PA are analyzed, and the new design strategy for the optimal bias selection has been developed to enhance the efficiency of cascode PA without sacrificing other performance. The measurement results show 18-dBm output power at peak power added efficiency (PAE) of 18.9% and 16.8- dBm 1-dB compression power (P 1dB ) with 15.5% of PAE under 2.7-V bias supply. The difference between the power at P 1dB and at peak PAE is reduced to 1.2 dB.
ISSN:2165-4727
2165-4743