A fully integrated SiGe E-BAND transceiver chipset for broadband point-to-point communication

Fully integrated chipset at E-band frequencies in a superhetrodyne architecture covering the lower 71-76 GHz and upper 81-86 GHz bands were designed and fabricated in 0.13%m SiGe technology. The receiver chips include an image-reject low-noise amplifier (LNA), RF-to-IF mixer, variable gain IF amplif...

Full description

Saved in:
Bibliographic Details
Main Authors: Katz, O., Ben-Yishay, R., Carmon, R., Sheinman, B., Szenher, F., Papae, D., Elad, D.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
E-band
Frequency measurement
Gain
Mixers
Noise measurement
Phase locked loops
Radio frequency
SiGe
Transceiver
Transmission line measurements
Wireless
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Fully integrated chipset at E-band frequencies in a superhetrodyne architecture covering the lower 71-76 GHz and upper 81-86 GHz bands were designed and fabricated in 0.13%m SiGe technology. The receiver chips include an image-reject low-noise amplifier (LNA), RF-to-IF mixer, variable gain IF amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and frequency multiplier by four (quadrupler). The receiver chips achieve 60dB gain, 8.5 dB noise figure, -30 dBm IIP3, and consumes 600 mW. The transmitter chips include a power amplifier, image-reject driver, IF-to-RF up-converting mixer, variable gain IF amplifier, quadrature baseband-to-IF modulator, PLL, and frequency multiplier by four (quadrupler). It achieves output power P1dB of 0 to 11 dBm, Psat of 3.3 to 14 dBm, and consumes 850 mW.
ISSN:2164-2958
2164-2974
DOI:10.1109/RWS.2012.6175323