A global-shutter CMOS image sensor with readout speed of 1Tpixel/s burst and 780Mpixel/s continuous

This paper presents a 400 H ×256 V pixel CMOS image sensor including 128 on-chip memory/pixel with 1Tpixel/s in burst operation without cooling and 780Mpixel/s in continuous operation. To improve the read-out speed from the chip, a noise-reduction circuit in pixel and relay buffers is introduced.

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Bibliographic Details
Main Authors: Tochigi, Y., Hanzawa, K., Kato, Y., Kuroda, R., Mutoh, H., Hirose, R., Tominaga, H., Takubo, K., Kondo, Y., Sugawa, S.
Format: Conference Proceeding
Language:English
Subjects:
Analog memory
Capacitors
CMOS image sensors
Noise
Switching circuits
Timing
Online Access:Request full text
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Description
Summary:This paper presents a 400 H ×256 V pixel CMOS image sensor including 128 on-chip memory/pixel with 1Tpixel/s in burst operation without cooling and 780Mpixel/s in continuous operation. To improve the read-out speed from the chip, a noise-reduction circuit in pixel and relay buffers is introduced.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2012.6177046