Self-Selective Characteristics of Nanoscale \hbox Devices for High-Density ReRAM Applications

We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VO x ) device simultaneously exhibited self-selective performance and memory switching by electroforming. By using W instead of Pt for the top electr...

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Bibliographic Details
Published in:IEEE electron device letters 2012-05, Vol.33 (5), p.718-720
Main Authors: Myungwoo Son, Xinjun Liu, Sadaf, S. M., Daeseok Lee, Sangsu Park, Wootae Lee, Seonghyun Kim, Jubong Park, Jungho Shin, Seungjae Jung, Moon-Ho Ham, Hyunsang Hwang
Format: Article
Language:English
Subjects:
Arrays
Materials
Metals
Nanoscale devices
Performance evaluation
Resistance
Resistive random access memory (ReRAM)
selection property
Switches
vanadium oxide (\hbox{VO}_{x}) nanoscale device
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Summary:We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VO x ) device simultaneously exhibited self-selective performance and memory switching by electroforming. By using W instead of Pt for the top electrode, memory performance was improved in terms of cycling, pulse endurance, and retention properties attributed to a self-formed WO x /VO x interface. Such a phenomenon in a simple metal-oxide-metal structure provides a good potential for future high-density cross-point memory devices by avoiding the sneak-path problem.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2188989