An n- \hbox /i-Diamond/p-Diamond Diode With Nanotip Structure for High-Temperature CO Sensing Applications

The Pd/n-SnO x /i-diamond/p-diamond diodes prepared by field-enhanced hot-wire CVD (HWCVD) (FEHWCVD) system on a silicon substrate with nanotip structures are studied systematically. Both the nanotip structure and the better film quality deposited by the FEHWCVD lead the developed p-i-n diamond diod...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2012-06, Vol.59 (6), p.1786-1791
Main Authors: Juang, Feng-Renn, Chiu, Hung-Yu, Fang, Yean-Kuen, Cho, Kao-Hsien, Chen, You-Chi
Format: Article
Language:English
Subjects:
CO sensor
diamond
Diamond-like carbon
hbox{SnO}_{x}
Nanostructures
p-i-n diode
P-i-n diodes
Sensitivity
Sensors
Silicon
Substrates
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The Pd/n-SnO x /i-diamond/p-diamond diodes prepared by field-enhanced hot-wire CVD (HWCVD) (FEHWCVD) system on a silicon substrate with nanotip structures are studied systematically. Both the nanotip structure and the better film quality deposited by the FEHWCVD lead the developed p-i-n diamond diode to have a high relative sensitivity ratio of ~ 91% to 100-ppm-carbon monoxide (CO)-gas ambient. The sensitivity ratio is better than 79% compared to the one without the nanotip and prepared by the conventional HWCVD. Thus, the developed p-i-n diamond diode has better potential for high-temperature CO sensing applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2191408