Design of an achievable, all lattice-matched multijunction solar cell using InGaAlAsSb

A design for a realistically achievable, multijunction solar cell based on all lattice-matched materials with >;50% projected efficiencies under concentration is presented. Using quaternary materials such as InAlAsSb and InGaAlAs at stochiometries lattice-matched to InP substrates, direct bandgap...

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Bibliographic Details
Main Authors: Walters, R. J., Gonzalez, M., Tischler, J. G., Lumb, M. P., Meyer, J. R., Vurgaftman, I., Abell, J., Yakes, M. K., Ekins-Daukes, N., Adams, J. G. J., Chan, N., Stavrinou, P., Jenkins, P. P.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Indium gallium arsenide
Indium phosphide
Junctions
Photonic band gap
Photovoltaic cells
Resistance
Online Access:Request full text
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Summary:A design for a realistically achievable, multijunction solar cell based on all lattice-matched materials with >;50% projected efficiencies under concentration is presented. Using quaternary materials such as InAlAsSb and InGaAlAs at stochiometries lattice-matched to InP substrates, direct bandgaps ranging from 0.74eV up to ~1.8eV, ideal for solar energy conversion, can be achieved. In addition, multi-quantum well structures are used to reduce the band-gap further to
ISSN:0160-8371
DOI:10.1109/PVSC.2011.6185859