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Two-dimensional dopant profiling in POCl3-diffused n+ emitter of textured silicon solar cells

We investigated two-dimensional dopant distribution in POCl 3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textu...

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Bibliographic Details
Main Authors: Chel-Jong Choi, Jin-Sung Kim, Kyungwon Moon, Yeon-Ho Kil, Young-Woo Ok, Rohatgi, A., Sung-Eun Park, Dong-Hwan Kim
Format: Conference Proceeding
Language:English
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Summary:We investigated two-dimensional dopant distribution in POCl 3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependency of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.
ISSN:0160-8371
DOI:10.1109/PVSC.2011.6186542