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Two-dimensional dopant profiling in POCl3-diffused n+ emitter of textured silicon solar cells
We investigated two-dimensional dopant distribution in POCl 3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textu...
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Main Authors: | , , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | We investigated two-dimensional dopant distribution in POCl 3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependency of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture. |
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ISSN: | 0160-8371 |
DOI: | 10.1109/PVSC.2011.6186542 |