Considerations on IDDQ test on OTFT circuits

In this paper we will analyze the feasibility of applying the well known IDDQ test technique to OTFT circuits. Specifically, we will analyze the implications of the leakage current, the Ion/Ioff ratio, and the S/N ratio on the applicability of IDDQ. It will be shown that, even if the IDDQ is applica...

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Bibliographic Details
Main Authors: Picos, R., Garcia, E., Roca, M., Isern, E., Iniguez, B., Castro-Carranza, A., Estrada, M., Cerdeira, A.
Format: Conference Proceeding
Language:English
Subjects:
Circuit faults
CMOS integrated circuits
Integrated circuit modeling
Noise
Organic thin film transistors
Online Access:Request full text
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Summary:In this paper we will analyze the feasibility of applying the well known IDDQ test technique to OTFT circuits. Specifically, we will analyze the implications of the leakage current, the Ion/Ioff ratio, and the S/N ratio on the applicability of IDDQ. It will be shown that, even if the IDDQ is applicable, some adaptation must be made, to allow detecting the possible faults over the background level. These adaptations may probably take the form of partitioning strategies, which must be adapted to the actual technology.
ISSN:2165-3542
DOI:10.1109/ICCDCS.2012.6188878