Single electron CMOS-like one bit full adder

This paper presents a comparative study of a one-bit-full-adder cell based on metallic complementary capacitively coupled single-electron transistors with its 22 nm CMOS counterpart. Performance and energy efficiency are investigated. The CMOS-like single-electron transistor based full adder is used...

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Bibliographic Details
Main Authors: Griveau, D., Ecoffey, S., Parekh, R. M., Bounouar, M. A., Calmon, F., Beauvais, J., Drouin, D.
Format: Conference Proceeding
Language:English
Subjects:
Adders
CMOS integrated circuits
Energy efficiency
full adder
Hysteresis
Inverters
Logic gates
Routing
Single electron transistors
single-electron transistor
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Summary:This paper presents a comparative study of a one-bit-full-adder cell based on metallic complementary capacitively coupled single-electron transistors with its 22 nm CMOS counterpart. Performance and energy efficiency are investigated. The CMOS-like single-electron transistor based full adder is used in two operating mode, hysteresis and non-hysteresis. Parallel and serial single electron transistors designs are introduced. The single electron inverter consumes less than 90.4 pW while it dissipates 4.21 nW in CMOS technology.
DOI:10.1109/ULIS.2012.6193361