Optical characterization of the novel nanostructure Eu-doped phosphor for potential application in LEDs

The novel Eu 2+ -activated SrZn 2 Si 2 O 7 phosphors were successfully prepared via the wet chemical method. Obtained phosphor is efficiently excited in the wavelength range of 340-400 nm which matches to a near UV (NUV) emitting InGaN chip and emits strong band blue light peaking at 481 nm due to 4...

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Bibliographic Details
Main Authors: Salimi, R., Sameie, H., Alvani, A. A. S., Sarabi, A. A., Khorasani, M., Farsi, M. A. M., Ebrahimi, Y., Tahriri, M.
Format: Conference Proceeding
Language:English
Subjects:
Ions
Light emitting diodes
Phosphors
Silicon
Transmission electron microscopy
X-ray scattering
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Summary:The novel Eu 2+ -activated SrZn 2 Si 2 O 7 phosphors were successfully prepared via the wet chemical method. Obtained phosphor is efficiently excited in the wavelength range of 340-400 nm which matches to a near UV (NUV) emitting InGaN chip and emits strong band blue light peaking at 481 nm due to 4f 6 5d 1 ( 2 D)→4f 7 ( 8 S 7/2 ) transition of Eu 2+ ions which acts as luminescence centers. The effect of the activator concentration and excess silicon on the optical properties was evaluated by luminescence spectroscopy. It was found that when the Eu 2+ content and the Si concentration were 0.04 and 1.3, respectively, the optimum phosphor can be achieved. Eventually, the crystallite size of the products was estimated about 30 nm by using XRD and TEM results.
DOI:10.1109/IQEC-CLEO.2011.6193634