Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT

Electron concentration profiles are simulated for the double-gate (DG) InAlAs/InGaAs/InP HEMT for nanometer gate dimension with two separate gate controls on either side of the double heterostructure. A Quantum Moments model has been used to account for the quantization effects in the device. The qu...

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Bibliographic Details
Main Authors: Verma, N., Jogi, J., Gupta, M., Gupta, R. S.
Format: Conference Proceeding
Language:English
Subjects:
double gate HEMT (DGHEMT)
electron concentration
HEMTs
Indium gallium arsenide
Indium phosphide
Logic gates
Mathematical model
nanodimensions
quantum well
Semiconductor process modeling
separate gate
simulation
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Summary:Electron concentration profiles are simulated for the double-gate (DG) InAlAs/InGaAs/InP HEMT for nanometer gate dimension with two separate gate controls on either side of the double heterostructure. A Quantum Moments model has been used to account for the quantization effects in the device. The quantum simulation of the confinement of the charge carriers in the nano-dimensional channel formed between the two hetero structures reveals a single peak for electron concentration in the channel with enhanced gate control. Moreover, simulated quantum results obtained for ID-VDS are verified by comparing them with the experimental 100nm Double-gate InAlAs/InGaAs/InP HEMT and are in good agreement.
DOI:10.1109/UKSim.2012.101