Body effect induced variability in Bulk tri-gate MOSFETs

We investigate and report the body-effect induced variability in Bulk tri-gate MOSFETs. Through 3-D atomistic simulation, the random dopant fluctuations in the Punch-Through-Stopper (PTS) region of Bulk tri-gate devices are examined. Our study indicates that to achieve an efficient threshold-voltage...

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Bibliographic Details
Main Authors: Chun-Hsien Chiang, Ming-Long Fan, Kuo, J. J-Y, Pin Su
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Doping
MOSFETs
Semiconductor process modeling
Solid modeling
Substrates
Threshold voltage
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Summary:We investigate and report the body-effect induced variability in Bulk tri-gate MOSFETs. Through 3-D atomistic simulation, the random dopant fluctuations in the Punch-Through-Stopper (PTS) region of Bulk tri-gate devices are examined. Our study indicates that to achieve an efficient threshold-voltage modulation through substrate bias, the high-doping PTS region may introduce excess variation in Bulk tri-gate devices. This effect has to be considered when one-to-one comparisons between Bulk tri-gate and SOI tri-gate regarding device variability are made.
ISSN:1524-766X
2690-8174
DOI:10.1109/VLSI-TSA.2012.6210130