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Formation of Al3Ti during physical vapor deposition of titanium on aluminium

Summary form only given. In the classical approach of W plugs, a Ti / TiN barrier is usually deposited prior to via filling, in order to obtain low contact resistances and satisfactory adherence. Therefore titanium is deposited onto the underlayer aluminium line at the bottom of vias, enabling the f...

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Main Authors:	Ulmer, L., Pitard, F., Poncet, D.
Format:	Conference Proceeding
Language:	English
Subjects:	Aluminum Annealing Chemical processes Electrical resistance measurement Filling Kinetic theory Plugs Spectroscopy Tin Titanium
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creator	Ulmer, L. Pitard, F. Poncet, D.
description	Summary form only given. In the classical approach of W plugs, a Ti / TiN barrier is usually deposited prior to via filling, in order to obtain low contact resistances and satisfactory adherence. Therefore titanium is deposited onto the underlayer aluminium line at the bottom of vias, enabling the formation of Al 3 Ti at the Ti /Al interface. In this study, the kinetics of this chemical reaction have been investigated on full sheet Ti /Al sandwiches processed in a fast anneal chamber. Two characterization methods have been developed. The first one was based on full sheet resistance measurements and the second one on WDXRF spectroscopy. For both methods, a model of the thickness of the Al 3 Ti layer formed versus annealing time and temperature was obtained using a centered composite design of experiments.
doi_str_mv	10.1109/MAM.1997.621091
format	conference_proceeding
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In the classical approach of W plugs, a Ti / TiN barrier is usually deposited prior to via filling, in order to obtain low contact resistances and satisfactory adherence. Therefore titanium is deposited onto the underlayer aluminium line at the bottom of vias, enabling the formation of Al 3 Ti at the Ti /Al interface. In this study, the kinetics of this chemical reaction have been investigated on full sheet Ti /Al sandwiches processed in a fast anneal chamber. Two characterization methods have been developed. The first one was based on full sheet resistance measurements and the second one on WDXRF spectroscopy. For both methods, a model of the thickness of the Al 3 Ti layer formed versus annealing time and temperature was obtained using a centered composite design of experiments.</description><identifier>ISSN: 1266-0167</identifier><identifier>DOI: 10.1109/MAM.1997.621091</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Annealing ; Chemical processes ; Electrical resistance measurement ; Filling ; Kinetic theory ; Plugs ; Spectroscopy ; Tin ; Titanium</subject><ispartof>European Workshop Materials for Advanced Metallization, 1997, p.137-137</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/621091$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,4050,4051,23930,23931,25140,27925,54555,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/621091$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ulmer, L.</creatorcontrib><creatorcontrib>Pitard, F.</creatorcontrib><creatorcontrib>Poncet, D.</creatorcontrib><title>Formation of Al3Ti during physical vapor deposition of titanium on aluminium</title><title>European Workshop Materials for Advanced Metallization</title><addtitle>MAM</addtitle><description>Summary form only given. In the classical approach of W plugs, a Ti / TiN barrier is usually deposited prior to via filling, in order to obtain low contact resistances and satisfactory adherence. Therefore titanium is deposited onto the underlayer aluminium line at the bottom of vias, enabling the formation of Al 3 Ti at the Ti /Al interface. In this study, the kinetics of this chemical reaction have been investigated on full sheet Ti /Al sandwiches processed in a fast anneal chamber. Two characterization methods have been developed. The first one was based on full sheet resistance measurements and the second one on WDXRF spectroscopy. For both methods, a model of the thickness of the Al 3 Ti layer formed versus annealing time and temperature was obtained using a centered composite design of experiments.</description><subject>Aluminum</subject><subject>Annealing</subject><subject>Chemical processes</subject><subject>Electrical resistance measurement</subject><subject>Filling</subject><subject>Kinetic theory</subject><subject>Plugs</subject><subject>Spectroscopy</subject><subject>Tin</subject><subject>Titanium</subject><issn>1266-0167</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNp9zrEOgjAYBOAOmkiU2cSpLwD2B9PKSIzEQTZ30kjR37SUtGDC24tRV6fLl7vhCFkDiwFYti3zMoYsEzFPJsKMBJBwHjHgYkFC7x-MsRTEfidEQM6FdUb2aFtqG5rr9IK0Hhy2N9rdR49XqelTdtbRWnXW42_ZYy9bHAydKPVg8I0VmTdSexV-c0k2xfFyOEWolKo6h0a6sfrcSv-WL8cRPEc</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Ulmer, L.</creator><creator>Pitard, F.</creator><creator>Poncet, D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>Formation of Al3Ti during physical vapor deposition of titanium on aluminium</title><author>Ulmer, L. ; Pitard, F. ; Poncet, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_6210913</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Aluminum</topic><topic>Annealing</topic><topic>Chemical processes</topic><topic>Electrical resistance measurement</topic><topic>Filling</topic><topic>Kinetic theory</topic><topic>Plugs</topic><topic>Spectroscopy</topic><topic>Tin</topic><topic>Titanium</topic><toplevel>online_resources</toplevel><creatorcontrib>Ulmer, L.</creatorcontrib><creatorcontrib>Pitard, F.</creatorcontrib><creatorcontrib>Poncet, D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ulmer, L.</au><au>Pitard, F.</au><au>Poncet, D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Formation of Al3Ti during physical vapor deposition of titanium on aluminium</atitle><btitle>European Workshop Materials for Advanced Metallization</btitle><stitle>MAM</stitle><date>1997</date><risdate>1997</risdate><spage>137</spage><epage>137</epage><pages>137-137</pages><issn>1266-0167</issn><abstract>Summary form only given. In the classical approach of W plugs, a Ti / TiN barrier is usually deposited prior to via filling, in order to obtain low contact resistances and satisfactory adherence. Therefore titanium is deposited onto the underlayer aluminium line at the bottom of vias, enabling the formation of Al 3 Ti at the Ti /Al interface. In this study, the kinetics of this chemical reaction have been investigated on full sheet Ti /Al sandwiches processed in a fast anneal chamber. Two characterization methods have been developed. The first one was based on full sheet resistance measurements and the second one on WDXRF spectroscopy. For both methods, a model of the thickness of the Al 3 Ti layer formed versus annealing time and temperature was obtained using a centered composite design of experiments.</abstract><pub>IEEE</pub><doi>10.1109/MAM.1997.621091</doi></addata></record>
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identifier	ISSN: 1266-0167
ispartof	European Workshop Materials for Advanced Metallization, 1997, p.137-137
issn	1266-0167
language	eng
recordid	cdi_ieee_primary_621091
source	IEEE Xplore All Conference Series
subjects	Aluminum Annealing Chemical processes Electrical resistance measurement Filling Kinetic theory Plugs Spectroscopy Tin Titanium
title	Formation of Al3Ti during physical vapor deposition of titanium on aluminium
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