The change of electrical properties of the aluminum-porous silicon contact by thermal annealing

The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the...

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Bibliographic Details
Main Authors: Zimin, S.P., Komarov, E.P.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Charge carriers
Contacts
Etching
Hydrogen
Impurities
Inorganic materials
Passivation
Plasma temperature
Silicon
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Summary:The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the Al-PS border by temperature influence.
ISSN:1266-0167
DOI:10.1109/MAM.1997.621101