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The change of electrical properties of the aluminum-porous silicon contact by thermal annealing

The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the...

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Main Authors:	Zimin, S.P., Komarov, E.P.
Format:	Conference Proceeding
Language:	English
Subjects:	Annealing Charge carriers Contacts Etching Hydrogen Impurities Inorganic materials Passivation Plasma temperature Silicon
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creator	Zimin, S.P. Komarov, E.P.
description	The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the Al-PS border by temperature influence.
doi_str_mv	10.1109/MAM.1997.621101
format	conference_proceeding
fullrecord	<record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_621101</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>621101</ieee_id><sourcerecordid>621101</sourcerecordid><originalsourceid>FETCH-LOGICAL-i89t-afb52969ef94a8dd2600ed8bd7c9ca8971af49619b34a7aab92670aae2d1f18a3</originalsourceid><addsrcrecordid>eNotUDtrwzAY1NBCQ5q50El_wKkku3qMIfQFCVm8m8_yp0RFlo0sD_n3dUiH4zjuMRwhL5xtOWfm7bg7brkxaivFovkDWXEhZcG4VE9kM02_jLGSK10ptSJNfUFqLxDPSAdHMaDNyVsIdEzDiCl7nG5GXmIQ5t7HuS_GIQ3zRCcfvB0iXZDBZtpeb7HUL2WIESH4eH4mjw7ChJt_XpP686PefxeH09fPfncovDa5ANe-CyMNOlOB7johGcNOt52yxoI2ioOrjOSmLStQAK0RUjEAFB13XEO5Jq_3WY-IzZh8D-na3A8o_wD00FM0</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>The change of electrical properties of the aluminum-porous silicon contact by thermal annealing</title><source>IEEE Xplore All Conference Series</source><creator>Zimin, S.P. ; Komarov, E.P.</creator><creatorcontrib>Zimin, S.P. ; Komarov, E.P.</creatorcontrib><description>The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the Al-PS border by temperature influence.</description><identifier>ISSN: 1266-0167</identifier><identifier>DOI: 10.1109/MAM.1997.621101</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Charge carriers ; Contacts ; Etching ; Hydrogen ; Impurities ; Inorganic materials ; Passivation ; Plasma temperature ; Silicon</subject><ispartof>European Workshop Materials for Advanced Metallization, 1997, p.161-161</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/621101$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,778,782,787,788,4038,4039,23917,23918,25127,27912,54542,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/621101$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zimin, S.P.</creatorcontrib><creatorcontrib>Komarov, E.P.</creatorcontrib><title>The change of electrical properties of the aluminum-porous silicon contact by thermal annealing</title><title>European Workshop Materials for Advanced Metallization</title><addtitle>MAM</addtitle><description>The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the Al-PS border by temperature influence.</description><subject>Annealing</subject><subject>Charge carriers</subject><subject>Contacts</subject><subject>Etching</subject><subject>Hydrogen</subject><subject>Impurities</subject><subject>Inorganic materials</subject><subject>Passivation</subject><subject>Plasma temperature</subject><subject>Silicon</subject><issn>1266-0167</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotUDtrwzAY1NBCQ5q50El_wKkku3qMIfQFCVm8m8_yp0RFlo0sD_n3dUiH4zjuMRwhL5xtOWfm7bg7brkxaivFovkDWXEhZcG4VE9kM02_jLGSK10ptSJNfUFqLxDPSAdHMaDNyVsIdEzDiCl7nG5GXmIQ5t7HuS_GIQ3zRCcfvB0iXZDBZtpeb7HUL2WIESH4eH4mjw7ChJt_XpP686PefxeH09fPfncovDa5ANe-CyMNOlOB7johGcNOt52yxoI2ioOrjOSmLStQAK0RUjEAFB13XEO5Jq_3WY-IzZh8D-na3A8o_wD00FM0</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Zimin, S.P.</creator><creator>Komarov, E.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>The change of electrical properties of the aluminum-porous silicon contact by thermal annealing</title><author>Zimin, S.P. ; Komarov, E.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i89t-afb52969ef94a8dd2600ed8bd7c9ca8971af49619b34a7aab92670aae2d1f18a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Annealing</topic><topic>Charge carriers</topic><topic>Contacts</topic><topic>Etching</topic><topic>Hydrogen</topic><topic>Impurities</topic><topic>Inorganic materials</topic><topic>Passivation</topic><topic>Plasma temperature</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Zimin, S.P.</creatorcontrib><creatorcontrib>Komarov, E.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore (Online service)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zimin, S.P.</au><au>Komarov, E.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The change of electrical properties of the aluminum-porous silicon contact by thermal annealing</atitle><btitle>European Workshop Materials for Advanced Metallization</btitle><stitle>MAM</stitle><date>1997</date><risdate>1997</risdate><spage>161</spage><epage>161</epage><pages>161-161</pages><issn>1266-0167</issn><abstract>The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the Al-PS border by temperature influence.</abstract><pub>IEEE</pub><doi>10.1109/MAM.1997.621101</doi><tpages>1</tpages></addata></record>
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identifier	ISSN: 1266-0167
ispartof	European Workshop Materials for Advanced Metallization, 1997, p.161-161
issn	1266-0167
language	eng
recordid	cdi_ieee_primary_621101
source	IEEE Xplore All Conference Series
subjects	Annealing Charge carriers Contacts Etching Hydrogen Impurities Inorganic materials Passivation Plasma temperature Silicon
title	The change of electrical properties of the aluminum-porous silicon contact by thermal annealing
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T04%3A32%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=The%20change%20of%20electrical%20properties%20of%20the%20aluminum-porous%20silicon%20contact%20by%20thermal%20annealing&rft.btitle=European%20Workshop%20Materials%20for%20Advanced%20Metallization&rft.au=Zimin,%20S.P.&rft.date=1997&rft.spage=161&rft.epage=161&rft.pages=161-161&rft.issn=1266-0167&rft_id=info:doi/10.1109/MAM.1997.621101&rft_dat=%3Cieee_CHZPO%3E621101%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i89t-afb52969ef94a8dd2600ed8bd7c9ca8971af49619b34a7aab92670aae2d1f18a3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=621101&rfr_iscdi=true