PLAD (Plasma Doping) on 22nm Technology Node and Beyond - Evolutionary and/or Revolutionary

PLAD (plasma doping) is promising for both evolutionary and revolutionary doping options because of its unique advantages which can overcome or minimize many of the issues of the beam-line (BL) based implants. In this talk, we present developments of PLAD on both planar and 3D device structures. Com...

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Bibliographic Details
Main Authors: Shu Qin, Hu, Y. J., McTeer, A.
Format: Conference Proceeding
Language:English
Subjects:
Contact resistance
Doping
Implants
Junctions
Plasmas
Silicon
Transistors
Online Access:Request full text
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Summary:PLAD (plasma doping) is promising for both evolutionary and revolutionary doping options because of its unique advantages which can overcome or minimize many of the issues of the beam-line (BL) based implants. In this talk, we present developments of PLAD on both planar and 3D device structures. Comparing with the conventional BL implants, PLAD shows not only a significant production enhancement, but also a significant device performance improvement and 3D structure doping capability, including an 80% contact resistance reduction, more than 25% drive current increase, and conformal doping on non-planar device structures. In PLAD developments and applications, the conventional metrologies are not suitable for PLAD process because of their limits and PLAD's unique properties. Novel diagnostic metrologies for PLAD process have been developed and are also presented in this talk.
DOI:10.1109/IWJT.2012.6212800