Scatterometry measurement for SiGe AEI sigma-shaped gate structures of 28nm technology

Novel process control methodologies are required for SiGe gate recess structures that are used in IC manufacturing to enhance device performance. Metrology measurements of 28nm SiGe after-etch inspection U-sigma shaped and V-sigma shaped gate structures must be able to track subtle variations for se...

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Bibliographic Details
Main Authors: Yu-Wen Wang, Yeh, A., Pao-Chung Lin, Chin-Cheng Chien, Lin, C-H B., Xu, Z-Q J., Cheng, C-Y H., Sungchul Yoo, Lin, J., Mihardja, L., Perry-Sullivan, C.
Format: Conference Proceeding
Language:English
Subjects:
Correlation
critical dimension
Logic gates
Metrology
Process control
Radar measurements
scatterometry
Shape measurement
SiGe gate recess
Silicon germanium
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Summary:Novel process control methodologies are required for SiGe gate recess structures that are used in IC manufacturing to enhance device performance. Metrology measurements of 28nm SiGe after-etch inspection U-sigma shaped and V-sigma shaped gate structures must be able to track subtle variations for several critical parameters, including SiGe-to-gate width, tip-to-gate width, sigma depth and recess depth. For production process control of these structures, a metrology tool must utilize a nondestructive measurement technique, and have high sensitivity, precision and throughput. This paper explores the capabilities of a new-generation scatterometry critical dimension (SCD) metrology tool to measure critical parameters and serve as a production process monitor for 28nm and beyond complex gate structures.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2012.6212879