Influences of etcher chamber condition on critical-dimension shifts in advanced floating gate etching process

The authors investigated the correlation between variation of post-etch critical dimension (ECD) and etcher chamber condition during floating gate etching process. This paper presents the significantly effective method of utilizing the SF 6 /O 2 -based very long plasma-chamber cleaning or the novel...

Full description

Saved in:
Bibliographic Details
Main Authors: Sheng-Yuan Chang, Yu-Chung Chen, An Chyi Wei, Hong-Ji Lee, Nan-Tzu Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Format: Conference Proceeding
Language:English
Subjects:
Cleaning
Critical dimension (CD)
Etcher chamber condition
Etching
Logic gates
Nonvolatile memory
Plasma temperature
Polymers
Transformer coupled plasma (TCP)
Tri-layer approach
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The authors investigated the correlation between variation of post-etch critical dimension (ECD) and etcher chamber condition during floating gate etching process. This paper presents the significantly effective method of utilizing the SF 6 /O 2 -based very long plasma-chamber cleaning or the novel Transformer coupled plasma (TCP) window temperature design not only achieves a stable gate CD (CD variation
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2012.6212899