Inherent Issues and Challenges of Program Disturbance of 3D NAND Flash Cell

Program disturbance characteristics of 3D vertical NAND Flash cell array architecture have been investigated intensively. A new 'program Y disturbance' mode peculiar to 3D NAND Flash cell is defined. Swing characteristics of poly-Si channel and increased NOP (number of program) stress have...

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Bibliographic Details
Main Authors: Keon-Soo Shim, Eun-Seok Choi, Sung-Wook Jung, Se-Hoon Kim, Hyun-Seung Yoo, Kwang-Sun Jeon, Han-Soo Joo, Jung-Seok Oh, Yoon-Soo Jang, Kyung-Jin Park, Sang-Moo Choi, Sang-Bum Lee, Jeong-Deog Koh, Ki-Hong Lee, Ju-Yeab Lee, Sang-Hyun Oh, Seung-Ho Pyi, Gyu-Seog Cho, Sung-Kye Park, Jin-Woong Kim, Seok-Kiu Lee, Sung-Joo Hong
Format: Conference Proceeding
Language:English
Subjects:
Arrays
DSL
Flash memory
Microprocessors
Three dimensional displays
Transistors
Citations: Items that cite this one
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Summary:Program disturbance characteristics of 3D vertical NAND Flash cell array architecture have been investigated intensively. A new 'program Y disturbance' mode peculiar to 3D NAND Flash cell is defined. Swing characteristics of poly-Si channel and increased NOP (number of program) stress have been compared with 2D planar NAND Flash cell. In this paper, new program method pertinent to 3D NAND Flash memory was proposed to obtain program disturbance characteristics for MLC.
ISSN:2159-483X
DOI:10.1109/IMW.2012.6213659