Electro-Mechanical Diode Performance and Scaling for Cross-Point Non-Volatile Memory Arrays

The performance and scaling behavior of an electro- mechanical diode non-volatile memory cell design is presented. Prototype electro-mechanical diodes are demonstrated to operate with relatively low set/reset voltages and excellent retention characteristics, and are multi-time programmable. Scaling...

Full description

Saved in:
Bibliographic Details
Main Authors: Kwon, W., Hutin, L., Tsu-Jae King Liu
Format: Conference Proceeding
Language:English
Subjects:
Computer architecture
Electrostatics
Force
Materials
Nonvolatile memory
Prototypes
Semiconductor diodes
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The performance and scaling behavior of an electro- mechanical diode non-volatile memory cell design is presented. Prototype electro-mechanical diodes are demonstrated to operate with relatively low set/reset voltages and excellent retention characteristics, and are multi-time programmable. Scaling to sub-20 nm feature size is projected. Due to its simplicity, this new cell design is attractive for implementation of compact (4F2) cross-point memory arrays.
ISSN:2159-483X
DOI:10.1109/IMW.2012.6213676