AlGaN/GaN HEMTs on Silicon With Hybrid Schottky-Ohmic Drain for High Breakdown Voltage and Low Leakage Current

In this letter, a hybrid Schottky-ohmic drain structure is proposed for AlGaN/GaN high-electron-mobility transistors on a Si substrate. Without additional photomasks and extra process steps, the hybrid drain design forms a Γ-shaped electrode to smooth the electric field distribution at the drain sid...

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Bibliographic Details
Published in:IEEE electron device letters 2012-07, Vol.33 (7), p.973-975
Main Authors: Yi-Wei Lian, Yu-Syuan Lin, Hou-Cheng Lu, Yen-Chieh Huang, Hsu, S. S. H.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Applied sciences
Breakdown voltage
Electronics
Exact sciences and technology
Gallium nitride
GaN
HEMTs
high-electron-mobility transistors (HEMTs)
Leakage current
Microelectronic fabrication (materials and surfaces technology)
MODFETs
Schottky
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Transistors
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Summary:In this letter, a hybrid Schottky-ohmic drain structure is proposed for AlGaN/GaN high-electron-mobility transistors on a Si substrate. Without additional photomasks and extra process steps, the hybrid drain design forms a Γ-shaped electrode to smooth the electric field distribution at the drain side, which improves the breakdown voltage and lowers the leakage current. In addition, the hybrid drain provides an auxiliary current path and decreases the on-resistance, in contrast to the devices with a pure Schottky drain. Compared with the conventional ohmic drain devices, the breakdown voltage could be improved up to 64.9%, and the leakage current is suppressed by one order of magnitude without degradation of the specific on-resistance.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2197171