Gas sensors on Ga2O3-In2O3 thin films

Ga 2 O 3 -In 2 O 3 thin films prepared by the magnetron sputtering from the Ga-In eutectic target and the subsequent thermal oxidation were considered. The effect of thermal oxidation conditions on the properties of the Ga 2 O 3 -In 2 O 3 thin films was investigated. The temperature dependence of co...

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Bibliographic Details
Main Authors: Kozlov, A. G., Krivozubov, O. V., Kurdukova, E. A., Lila, M. N.
Format: Conference Proceeding
Language:English
Subjects:
Chemical sensors
Gas detectors
Oxidation
Temperature dependence
Temperature sensors
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Summary:Ga 2 O 3 -In 2 O 3 thin films prepared by the magnetron sputtering from the Ga-In eutectic target and the subsequent thermal oxidation were considered. The effect of thermal oxidation conditions on the properties of the Ga 2 O 3 -In 2 O 3 thin films was investigated. The temperature dependence of conductance of the Ga 2 O 3 -In 2 O 3 thin films was studied at the range of 20-500°C. The effect of concentration of some gases (ethanol, acetone, and ammonia) on the resistance of the gas sensors made of Ga 2 O 3 -In 2 O 3 thin films was investigated.
DOI:10.1109/MIEL.2012.6222824