Broadband high efficiency GaN power amplifier

This paper reports on the design methodology and realization of a hybrid feedback power amplifier using discrete GaN HEMT die with chip & wire technology. The power amplifier was measured to have over 12.8 dB gain with ±0.85dB flatness and higher than 30.7 dBm output power over 100 MHz to 1GHz....

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Bibliographic Details
Main Authors: Yijie Qiu, Yuehang Xu, Yunchuan Guo, Ruimin Xu
Format: Conference Proceeding
Language:English
Subjects:
Gain measurement
Gallium nitride
HEMTs
Power amplifiers
Power generation
Power measurement
Online Access:Request full text
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Summary:This paper reports on the design methodology and realization of a hybrid feedback power amplifier using discrete GaN HEMT die with chip & wire technology. The power amplifier was measured to have over 12.8 dB gain with ±0.85dB flatness and higher than 30.7 dBm output power over 100 MHz to 1GHz. Power added efficiency (PAE) of 61.3% was acquired at mid-band frequency and more than 54.5% from 100MHz to 1GHz.
DOI:10.1109/ICMMT.2012.6229901