Reduced Trap-State Density of Ni-Silicide Seed-Induced Crystallized Poly-Si TFTs by Gettering

Polycrystalline silicon thin-film transistors (TFTs) fabricated by seed-induced crystallization (SIC) have large leakage currents due to defects that consist of Ni impurities. Here, we describe a novel method of gettering to remove Ni impurities using a Si gettering layer that is separated from the...

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Bibliographic Details
Published in:IEEE electron device letters 2012-08, Vol.33 (8), p.1141-1143
Main Authors: Byun, Chang Woo, Son, Se Wan, Lee, Yong Woo, Joo, Seung Ki
Format: Article
Language:English
Subjects:
Applied sciences
Crystallization
Electronics
Exact sciences and technology
Gettering
Nickel
Polycrystalline silicon (poly-Si)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicide seed-induced crystallization (SIC)
silicides
Silicon
Silicon carbide
Thin film transistors
thin-film transistors (TFTs)
Transistors
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Description
Summary:Polycrystalline silicon thin-film transistors (TFTs) fabricated by seed-induced crystallization (SIC) have large leakage currents due to defects that consist of Ni impurities. Here, we describe a novel method of gettering to remove Ni impurities using a Si gettering layer that is separated from the active layer by a chemical SiO 2 etch stop interlayer formed by dipping into H 2 SO 4 . The leakage current, the on/off ratio, and a channel breakdown voltage were greatly improved. These results were explained by lowered trap-state density in the channel.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2200093