GaN-based millimeter-wave monolithic integrated circuits

Monolithic millimeter-wave integrated circuits based on AlGaN/GaN high electron mobility transistors have been processed in order to realize high power transmitters as well as efficient receivers operating at frequencies around 60 GHz and 77 GHz, respectively.

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Bibliographic Details
Main Authors: Schwantuschke, D., Kallfass, I., Quay, R., Ambacher, O.
Format: Conference Proceeding
Language:English
Subjects:
AlGaN/GaN power amplifier
Aluminum gallium nitride
Gain
Gallium nitride
HEMTs
high electron mobility transistor
MMICs
monolithic millimeter-wave integrated circuit
Power amplifiers
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Description
Summary:Monolithic millimeter-wave integrated circuits based on AlGaN/GaN high electron mobility transistors have been processed in order to realize high power transmitters as well as efficient receivers operating at frequencies around 60 GHz and 77 GHz, respectively.
DOI:10.1109/MIKON.2012.6233508