140-220 GHz SPST and SPDT Switches in 45 nm CMOS SOI

This letter presents 140-220 GHz single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches built using 45 nm semiconductor-on-insulator (SOI) CMOS technology. A tuned-shunt topology is used to minimize the insertion loss, and the transistor layout results in very low ground induct...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2012-08, Vol.22 (8), p.412-414
Main Authors: Uzunkol, M., Rebeiz, G. M.
Format: Article
Language:English
Subjects:
45 nm CMOS
Applied sciences
Circuit properties
CMOS integrated circuits
CMOS technology
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Inductance
Insertion loss
Integrated circuits
Loss measurement
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
millimeter-wave
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
single-pole single-throw (SPST)
Switching, multiplexing, switched capacity circuits
Transistors
Transmission line measurements
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Summary:This letter presents 140-220 GHz single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches built using 45 nm semiconductor-on-insulator (SOI) CMOS technology. A tuned-shunt topology is used to minimize the insertion loss, and the transistor layout results in very low ground inductance and high isolation. The double-shunt SPST switch results in an insertion loss of 1.0 dB and an isolation of 20 dB, while the SPDT switches result in an insertion loss of 3.0 dB and an isolation of 20-25 dB, all at 180 GHz. The switches are well matched with a return loss at all ports greater than 10 dB at 140-220 GHz. The work shows that advanced CMOS nodes can be used for transmit-receive switches in emerging 140-220 GHz CMOS systems.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2012.2206017