Low temperature Au-Au flip chip bonding with VUV/O3 treatment for 3D integration

This paper describes low temperature Au-Au bonding with vacuum ultraviolet (VUV) irradiation in the presence of oxygen gas. The VUV/O 3 treatment can remove organic contaminants without damages. The Au-Au bonding with VUV/O 3 treatment was achieved at 200°C. The average shear strength was about 80 M...

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Bibliographic Details
Main Authors: Okada, A., Nimura, M., Unami, N., Shigetou, A., Noma, H., Sakuma, K., Shoji, S., Mizuno, J.
Format: Conference Proceeding
Language:English
Subjects:
Acoustics
Bonding
Gold
Plasma temperature
Radiation effects
Surface treatment
Online Access:Request full text
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Summary:This paper describes low temperature Au-Au bonding with vacuum ultraviolet (VUV) irradiation in the presence of oxygen gas. The VUV/O 3 treatment can remove organic contaminants without damages. The Au-Au bonding with VUV/O 3 treatment was achieved at 200°C. The average shear strength was about 80 MPa per unit area. Therefore, it was proved that VUV/O 3 treatment is effective in Au-Au bonding.
DOI:10.1109/LTB-3D.2012.6238082