New insights into gate-dielectric breakdown by electrical characterization of interfacial and oxide defects with reverse modeling methodology

A new methodology of defect characterization, through combination of measurements and simulations, is used to monitor the defect creation rate leading to gate-oxide breakdown. Two defect time-power creation rates were extracted, thus modifying the classical understanding of Weibull slope variation w...

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Bibliographic Details
Main Authors: Randriamihaja, Y. M., Garetto, D., Huard, V., Rideau, D., Roy, D., Rafik, M., Bravaix, A.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
charge pumping
Current measurement
Electric breakdown
interface defects
Logic gates
oxide defects
SILC
Stress
Stress measurement
TDDB
Tunneling
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Description
Summary:A new methodology of defect characterization, through combination of measurements and simulations, is used to monitor the defect creation rate leading to gate-oxide breakdown. Two defect time-power creation rates were extracted, thus modifying the classical understanding of Weibull slope variation with oxide thickness. Based on our methodology, an explanation of the gate current increase prior to hard BD is proposed.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2012.6241914