0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications

In this paper, we present two high voltage (up to 10V supply voltage), RF drivers in standard 65nm CMOS technology. The medium power (MP) driver operates from 0.5GHz to 4GHz with up to 9.6V peak-to-peak(pp) output voltage swing while driving a 3pF load capacitance. This driver consumes 0.75W dc powe...

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Bibliographic Details
Main Authors: Acar, M., van der Heijden, M. P., Leenaerts, D. M. W.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Capacitors
CMOS
CMOS integrated circuits
extended-drain mos
GaN
high voltage
Inverters
LDMOS
Logic gates
power amplifier
power driver
power transistor
Radio frequency
Transistors
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Summary:In this paper, we present two high voltage (up to 10V supply voltage), RF drivers in standard 65nm CMOS technology. The medium power (MP) driver operates from 0.5GHz to 4GHz with up to 9.6V peak-to-peak(pp) output voltage swing while driving a 3pF load capacitance. This driver consumes 0.75W dc power at 2GHz and achieves a duty-cycle control of 23% to 82% at 1GHz and 38% to 73% at 2GHz. The high power (HP) driver consumes 5W dc power at 2.14GHz while driving an RF power device (50W) with ≈30pF input capacitance. The CMOS drivers can serve as key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2012.6242282